document number: 89377 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 31-may-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 avalanche surface mount rectifiers as3bj vishay general semiconductor typical applications for use in general purpose rectification of power supplies, inverters, converters, and freewheeling diodes for consumer, automotive, and telecommunication. features ? low profile package ? ideal for automated placement ? glass passivated chip junction ? controlled avalanche characteristics ? low leakage current ? high forward surge capability ? aec-q101 qualified ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to ie c 61249-2-21 definition mechanical data case: do-214aa (smb) molding compound meets ul 94 v-0 flammabi lity rating base p/n-m3 - halogen-free, rohs compliant, and commercial grade base p/nhm3 - halogen-free, rohs compliant, and aec-q101 qualified terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 m3 suffix meets jesd 201 class 1a whisker test, hm3 suffix meets jesd 201 class 2 whisker test polarity: color band denotes cathode end notes (1) mounted on 14 mm x 14 mm x 2 areas, 1 oz. fr4 pcb (2) free air, mounted on recommend ed 1.52 mm x 2.18 mm x 2 pad areas primary characteristics i f(av) 3.0 a v rrm 600 v i fsm 90 a e as 20 mj v f at i f = 3.0 a (t a = 125 c) 0.86 v t j max. 175 c do-214aa ( s mb) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol as3bj unit device marking code a3j maximum repetitive pe ak reverse voltage v rrm 600 v maximum dc forward current (fig. 1) i f (1) 3.0 a i f (2) 2.0 peak forward surge current 10 ms single half sine-wave, non-repetitive, t j = 25 c i fsm 90 a non-repetitive avalanche energy at t j = 25 c i as = 2.0 a max. e as 20 mj i as = 1.0 a typ. 30 operating junction and storage temperature range t j , t stg - 55 to + 175 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 89377 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 31-may-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 as3bj vishay general semiconductor notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width ? 40 ms notes (1) free air, mounted on recommended pcb 1 oz. pad area; thermal resistance r ? ja - junction to ambient (2) units mounted on pcb with 14 mm x 14 mm x 2 areas, 1 oz. co pper pad areas; r ? jm - junction to mount note (1) aec-q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - maximum forward current derating curve fig. 2 - forward power loss characteristics electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditi ons symbol typ. max. unit instantaneous forward voltage i f = 1.5 a t a = 25 c v f (1) 0.90 - v i f = 3.0 a 0.98 1.05 i f = 1.5 a t a = 125 c 0.78 - i f = 3.0 a 0.86 0.95 reverse current v r = 600 v t a = 25 c i r (2) 0.5 20 a t a = 125 c 40 150 typical reverse recovery time i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 1.5 - s typical junction capacitance per diode rated v r = 4.0 v, 1 mhz c j 40 - pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol as3bj unit typical thermal resistance r ? ja (1) 100 c/w r ? jm (2) 14 ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode as3bj-m3/52t 0.096 52t 750 7" diameter plastic tape and reel as3bj-m3/5bt 0.096 5bt 3200 13" diam eter plastic tape and reel as3bjhm3/52t (1) 0.096 52t 750 7" diameter plastic tape and reel as3bjhm3/5bt (1) 0.096 5bt 3200 13" diameter plastic tape and reel t m - mount temperature (c) dc forward current (a) 3.2 0 25 50 75 100 175 0 0.8 2.4 3.6 2.0 2.8 0.4 1.2 1.6 125 150 t m mea s ured at the terminal t m = 140 c free air t a = 25 c average forward current (a) average power loss (w) 0 0.4 2.4 2.8 3.2 0 3.5 2.0 1.6 1.2 0.8 3.0 2.5 2.0 1.5 1.0 0.5 d = t p /t t p t d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0.8 d = 1.0
document number: 89377 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 31-may-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 as3bj vishay general semiconductor fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse characteristics fig. 5 - typical j unction capacitance fig. 6 - typical transient thermal impedance package outline dimensions in inches (millimeters) 0.1 1 10 100 0.4 1.5 instantaneous forward current (a) t a = 175 c t a = 125 c t a = 25 c instantaneous forward voltage (v) 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 t a = 75 c 0.1 1 10 100 1000 10 20 40 60 80 100 t j = 175 c t j = 125 c t j = 25 c instantaneous reverse current (a) percent of rated peak reverse voltage (%) 30 50 70 90 t j = 75 c 1 10 1000 0.1 1 10 100 junction capacitance (pf) reverse voltage (v) 100 t j = 25 c f = 1.0 mhz v s ig = 50 mv p-p 10 1000 1 0.01 1 100 0.1 10 t - pulse duration (s) transient thermal impedance (c/w) 100 free air junction to ambient cathode band do-214aa ( s mb) 0.086 (2.20) 0.077 (1.95) 0.155 (3.94) 0.130 (3.30) 0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) 0.060 (1.52) 0.030 (0.76) 0.096 (2.44) 0.084 (2.13) mountin g pa d layout 0.086 (2.18) min. 0.060 (1.52) min. 0.085 (2.159) max. 0.220 (5.59) ref.
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